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ST 2SC3112
NPN Silicon Epitaxial Planar Transistor
for general purpose and switching applications.
1.Emitter 3.Collector 2.Base TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC IB Ptot Tj TS
Value 50 50 5 150 30 625 150 - 55 to + 150
Unit V V V mA mA mW
O
C C
O
Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 2 mA Current Gain Group A B Collector Cutoff Current at VCB = 50 V Emitter Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 A Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 A Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA Gain Bandwidth Product at VCE = 10 V, IC = 10 mA Collector Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz
Symbol hFE hFE ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) fT Cob
Min. 600 1200 50 50 5 100 -
Typ. 3.5
Max. 1800 3600 100 100 0.25 -
Unit nA nA V V V V MHz pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 17/04/2007
ST 2SC3112
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 17/04/2007

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